INFLUENCE OF THE EMITTER PRODUCED WITH REDUCTION OF THERMAL STEPS IN THE ELECTRICAL PARAMETERS OF N-TYPE BIFACIAL SOLAR CELLS
DOI:
https://doi.org/10.59627/cbens.2022.1075Keywords:
Células solares bifaciais, Estrutura PERT base n, Redução de etapas térmicasAbstract
Bifacial solar cells produced in n-type silicon wafers have the potential to obtain high efficiency and bifaciality near to one. With this goal, the objective of this article is to analyze the influence of the method to produce the emitter and the back surface field in the same thermal step in the electrical parameters of n-type bifacial solar cells with PERT structure and silicon dioxide surface passivation. The spin-on technique was used and the boron diffusion was carried out in a conventional tube furnace, followed by the diffusion of phosphorus with POCl3. The temperature of boron diffusion was ranged from 940 °C to 980 °C and the sheet resistance of the emitter and the back surface field (BSF) doped with phosphorus were analyzed as well as its influence on the electrical parameters of the bifacial solar cells. The sheet resistance of the boron emitter decreased from (116 ± 6) Ω/sq to (64 ± 2) Ω/sq with increasing of the boron diffusion temperature from 940 °C to 980 °C. However, the sheet resistance of the phosphorus back surface field increased, indicating that boron diffusion affected the phosphorus-doped region. The efficiencies of 15.3% and 15.5%, with irradiance in the emitter and in the back surface field, respectively, was achieved with the boron diffusion temperature of 960 °C. In this solar cell the bifaciality was 0.987. We found that the open circuit voltage was higher with irradiance in the BSF, regardless of the processing temperature. Moreover, in both illumination modes, the open circuit voltage and fill factor grew up until the processing temperature of 960 °C. However, the short-circuit current density with irradiance in the emitter decreases slightly with the increasing of the boron diffusion temperature, due to the high recombination of the minority charge carriers. The fill factor was the electrical parameter that most affected the efficiency.
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