INFLUENCE OF THE WIDTH OF THE BUSBARS AND FIRING TEMPERATURE IN SOLAR CELLS WITH ALUMINUM BACK SURFACE FIELD
DOI:
https://doi.org/10.59627/cbens.2014.2119Keywords:
Solar Cells, Aluminium Back Surface Field, BusbarsAbstract
The use of solar energy for electric energy production has been highlighted due to the exhaustion of natural sources. Solar cells fabricated in p-type Si-Cz wafers and with back surface field formed by aluminum paste are largely produced by industry. The formation of the back surface field and busbars in a solar cell is very important to the overall performance of the solar cell. The objective of this study is to evaluate the influence of the width of the rear busbars and of the firing temperature in solar cells developed in solar grade Si-Cz wafers, with back surface field performed by aluminum paste. The width of the busbars was ranged and the simultaneous firing peak temperature was optimized for Ag, Al, and Ag/Al pastes. The firing temperature was ranged from 840 °C to 970 °C. The fill factor for the solar cells with busbars of 10 mm was 0.75, lower than the value of 0.78 obtained for devices with busbar of 3.8 mm, increasing the open circuit voltage from 579 mV to 597 mV. The efficiency achieved was 14.5 %. The minority charge carrier diffusion length measured in solar cells with busbars of 3.8 mm was 516 μm. This value was greater than that obtained with devices with bases of 10 mm, which value was 132 μm.
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